Temperature-dependent transfer characteristics of low turn-on voltage InGaZnO metal-oxide devices with thin titanium oxide capping layers

Hsiao Hsuan Hsu, Chun Hu Cheng*, Ping Chiou, Yu Chien Chiu, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper reports an InGaZnO thin-film transistor involving a wide bandgap gate dielectric of ZrO2 and IGZO/TiOx channel stack. According to our experimental results, the IGZO TFT with a thin TiOx channel capping layer shows good device integrity of a low threshold voltage of 0.37 V, a small sub-threshold swing of 77 mV/decade, and a high mobility of 33 cm2/V·s under a low drive voltage of <2V. We also demonstrate that the significantly improved electrical property is mainly contributed by the enhanced channel electric field after TiOx capping, associated with maximizing charge accumulated capability. The favorable high-temperature transfer characteristics are also obtained in IGZO/TiOx TFT, indicating a weak Fermi-level pinning in IGZO/TiOx channel structure. With the operating temperature increasing further, the thermal activated effect shall dominate IGZO channel property beyond percolation conduction.

原文英語
文章編號6894152
頁(從 - 到)512-517
頁數6
期刊IEEE/OSA Journal of Display Technology
11
發行號6
DOIs
出版狀態已發佈 - 2015 六月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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