Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film

Chun Hu Cheng, Wei Ting Chen, Kuan Hsiang Lin, Hsuan Han Chen, Ruo Yin Liao, Ching Chien Huang, Shih Hao Lin*, Hsiao Hsuan Hsu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it is found the reduction percentage of the ferroelectric memory window (2Pr) from 6.5 μC cm−2 (25 °C) to 6.3 μC cm−2 (75 °C) is only 3%, indicating that the ferroelectric HfAlO film has a robust operating temperature stability. The excellent high temperature endurance properties show around 30% of the original 2Pr value (6.3 μC cm−2) can be held after being fatigued up to 108 endurance cycles at 75 °C without breakdown. Additionally, using Arrhenius plot fitting (ln(J/E) vs 1/kT) before and after endurance cycles was extracted the changes of trapping energy level to better understand the relationship between leakage current, oxygen vacancies or defects tapping of polarization-switching behavior in HfAlO ferroelectric film.

原文英語
文章編號083013
期刊ECS Journal of Solid State Science and Technology
11
發行號8
DOIs
出版狀態已發佈 - 2022 8月

ASJC Scopus subject areas

  • 電子、光磁材料

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