Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Pi Chun Juan; Cheng Li Lin; Chuan Hsi Liu; Chun Heng Chen; Yin Ku Chang; Ling Yen Yeh

doi:10.1016/j.tsf.2013.05.087

Temperature-dependent current conduction of metal-ferroelectric (BiFeO ₃)-insulator (ZrO₂)-Silicon capacitors for nonvolatile memory applications

Pi Chun Juan^*, Cheng Li Lin, Chuan Hsi Liu, Chun Heng Chen, Yin Ku Chang, Ling Yen Yeh

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Metal-ferroelectric-insulator-semiconductor structures with BiFeO ₃ as the ferroelectric layer and zirconium oxide ZrO₂ as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O₂) ratio. The sizes of memory window as functions of Ar/O₂ ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

原文	英語
頁（從 - 到）	360-364
頁數	5
期刊	Thin Solid Films
卷	539
DOIs	https://doi.org/10.1016/j.tsf.2013.05.087
出版狀態	已發佈 - 2013 7月 31

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2013.05.087

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title = "Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications",

abstract = "Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.",

keywords = "Bismuth ferrite, Conduction mechanism, Memory window, Metal-ferroelectric-insulator-semiconductor",

author = "Juan, {Pi Chun} and Lin, {Cheng Li} and Liu, {Chuan Hsi} and Chen, {Chun Heng} and Chang, {Yin Ku} and Yeh, {Ling Yen}",

note = "Funding Information: The authors wish to thank the National Science Council of Taiwan, Republic of China for supporting this work under Grants No. NSC 99-2221-E-131-022-MY2 .",

year = "2013",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2013.05.087",

language = "English",

volume = "539",

pages = "360--364",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

AU - Juan, Pi Chun

AU - Lin, Cheng Li

AU - Liu, Chuan Hsi

AU - Chen, Chun Heng

AU - Chang, Yin Ku

AU - Yeh, Ling Yen

N1 - Funding Information: The authors wish to thank the National Science Council of Taiwan, Republic of China for supporting this work under Grants No. NSC 99-2221-E-131-022-MY2 .

PY - 2013/7/31

Y1 - 2013/7/31

N2 - Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

AB - Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

KW - Bismuth ferrite

KW - Conduction mechanism

KW - Memory window

KW - Metal-ferroelectric-insulator-semiconductor

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U2 - 10.1016/j.tsf.2013.05.087

DO - 10.1016/j.tsf.2013.05.087

M3 - Article

AN - SCOPUS:84879411917

SN - 0040-6090

VL - 539

SP - 360

EP - 364

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

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ASJC Scopus subject areas

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Temperature-dependent current conduction of metal-ferroelectric (BiFeO ₃)-insulator (ZrO₂)-Silicon capacitors for nonvolatile memory applications