Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Pi Chun Juan*, Cheng Li Lin, Chuan Hsi Liu, Chun Heng Chen, Yin Ku Chang, Ling Yen Yeh

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen (Ar/O2) ratio. The sizes of memory window as functions of Ar/O2 ratio and postannealing temperature were investigated. The dominant conduction mechanism is Schottky emission and the reflective index (n) is calculated to be from 4.31 to 2.51 in the temperature range of 300 to 425 K under positive bias. However, the electrical conduction is dominated by Poole-Frenkel emission and the effective trap barrier height is about 0.65 eV under negative bias. The effect of surface roughness on the electrical conduction has been studied.

原文英語
頁(從 - 到)360-364
頁數5
期刊Thin Solid Films
539
DOIs
出版狀態已發佈 - 2013 七月 31

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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