Temperature dependence of transport properties of evaporated indium tin oxide films

K. F. Huang; T. M. Uen; Y. S. Gou; C. R. Huang; H. C. Yang

doi:10.1016/0040-6090(87)90116-7

Temperature dependence of transport properties of evaporated indium tin oxide films

K. F. Huang^*, T. M. Uen, Y. S. Gou, C. R. Huang, H. C. Yang

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

45 引文斯高帕斯（Scopus）

摘要

Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In₂O₃ powder. At room temperature the films have high carrier mobilities of about 60 cm² V^-1 s^-1. Conductivities as high as 5 × 10³ Ω^-1 cm^-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10^-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

原文	英語
頁（從 - 到）	7-15
頁數	9
期刊	Thin Solid Films
卷	148
發行號	1
DOIs	https://doi.org/10.1016/0040-6090(87)90116-7
出版狀態	已發佈 - 1987 3月 30

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/0040-6090(87)90116-7

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abstract = "Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. M{\"o}ssbauer spectroscopy showed that the tin in all the high quality films was tetravalent.",

author = "Huang, {K. F.} and Uen, {T. M.} and Gou, {Y. S.} and Huang, {C. R.} and Yang, {H. C.}",

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AU - Huang, K. F.

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Huang, C. R.

AU - Yang, H. C.

PY - 1987/3/30

Y1 - 1987/3/30

N2 - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

AB - Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

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Temperature dependence of transport properties of evaporated indium tin oxide films

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