Temperature dependence of transport properties of evaporated indium tin oxide films

K. F. Huang*, T. M. Uen, Y. S. Gou, C. R. Huang, H. C. Yang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

43 引文 斯高帕斯(Scopus)

摘要

Indium tin oxide films with high conductivity and transparency were successfully prepared by evaporating an alloy of indium and tin covered with In2O3 powder. At room temperature the films have high carrier mobilities of about 60 cm2 V-1 s-1. Conductivities as high as 5 × 103 Ω-1 cm-1 and transmittance values of greater than 90% in the visible region of light were obtained. The carrier mobility was found to be inversely proportional to temperature in the high temperature range and independent of temperature in the low temperature range. The temperature dependence of the carrier conductivity indicated that the carrier excitation energy was less than 8.6 × 10-6 eV. Mössbauer spectroscopy showed that the tin in all the high quality films was tetravalent.

原文英語
頁(從 - 到)7-15
頁數9
期刊Thin Solid Films
148
發行號1
DOIs
出版狀態已發佈 - 1987 三月 30
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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