Temperature dependence of the excess noise of a GaN nanowire device

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, Chia Chun Chen

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.

原文英語
主出版物標題Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
頁面180-183
頁數4
DOIs
出版狀態已發佈 - 2007 十二月 1
事件19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, 日本
持續時間: 2007 九月 92007 九月 14

出版系列

名字AIP Conference Proceedings
922
ISSN(列印)0094-243X
ISSN(電子)1551-7616

其他

其他19th International Conference on Noise and Fluctuations, ICNF2007
國家日本
城市Tokyo
期間07/9/907/9/14

    指紋

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

引用此

Li, L. C., Huang, S. Y., Wei, J. A., Suen, Y. W., Lee, M. W., Hsieh, W. H., Liu, T. W., & Chen, C. C. (2007). Temperature dependence of the excess noise of a GaN nanowire device. 於 Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007 (頁 180-183). (AIP Conference Proceedings; 卷 922). https://doi.org/10.1063/1.2759662