Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim; Julian J. Sanchez; Thomas A. DeMassa; Mohammed T. Quddus; Robert O. Grondin; Chuan H. Liu

doi:10.1016/S0038-1101(98)00196-8

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim^*, Julian J. Sanchez, Thomas A. DeMassa, Mohammed T. Quddus, Robert O. Grondin, Chuan H. Liu

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

原文	英語
頁（從 - 到）	57-63
頁數	7
期刊	Solid-State Electronics
卷	43
發行號	1
DOIs	https://doi.org/10.1016/S0038-1101(98)00196-8
出版狀態	已發佈 - 1999
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/S0038-1101(98)00196-8

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abstract = "The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.",

author = "Kim, {Jong Hyun} and Sanchez, {Julian J.} and DeMassa, {Thomas A.} and Quddus, {Mohammed T.} and Grondin, {Robert O.} and Liu, {Chuan H.}",

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doi = "10.1016/S0038-1101(98)00196-8",

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T1 - Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

AU - Kim, Jong Hyun

AU - Sanchez, Julian J.

AU - DeMassa, Thomas A.

AU - Quddus, Mohammed T.

AU - Grondin, Robert O.

AU - Liu, Chuan H.

PY - 1999

Y1 - 1999

N2 - The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

AB - The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

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Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

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