Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy

C. R. Lu, J. R. Anderson, D. R. Stone, W. T. Beard, R. A. Wilson, T. F. Kuech, S. L. Wright

研究成果: 雜誌貢獻文章

26 引文 斯高帕斯(Scopus)

摘要

The temperature and doping-concentration dependence of the oscillatory properties in the photoreflectance (PR) spectra of GaAs grown by molecular-beam epitaxy has been studied in detail. The peak separation of the oscillatory part of the PR spectrum is related to the internal electric field in the sample. Both the peak spacing of the oscillations and the internal electric field increase with increasing temperature and doping density. A PR spectrum with two kinds of oscillations from two interfaces across different doping profiles was also observed. Our study of oscillatory properties not only verified the electromodulation character of the PR experiment but also extracted the temperature dependence of the surface Fermi level.

原文英語
頁(從 - 到)11791-11797
頁數7
期刊Physical Review B
43
發行號14
DOIs
出版狀態已發佈 - 1991 一月 1

ASJC Scopus subject areas

  • Condensed Matter Physics

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