Temperature and bias dependences of defect mode in a photonic crystal containing a photonic-quantum-well defect

The temperature- and bias-dependent properties of the defect mode in a one-dimensional photonic crystal (1D PC) containing a photonic-quantum-well (PQW) defect are theoretically investigated. The temperature dependence is studied by simultaneously incorporating thermal expansion and thermal-optical effects in the constituent layers. As the thickness and index of refraction of each layer are modulated by temperature, a tunable filter working in the visible region is proposed. The shift of transmittance peak per 100 °C is around 2 nm, depending on the value of m, which is the stack number of the PQW and ranges between 1 and 3 in our study. It is found that the third transmittance peak in the case of m = 3 is most sensitive to temperature (2.43 nm per 100 °C), whereas the second transmittance peak of m = 3 is the sharpest. The bias dependence is studied by considering the electro-optic effect of the defected layer. The shifts of transmittance peaks are found to be in the range of 0.129 ∼ 0.188 nm per 1 kV of applied voltage. Additionally, the second transmittance peak of m = 3 is most sensitive to voltage, and it is also the sharpest peak.