Tapered active-region quantum cascade lasers (λ=4.8 μm) for virtual suppression of carrier-leakage currents

J. D. Kirch*, J. C. Shin, C. C. Chang, L. J. Mawst, D. Botez, T. Earles

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

28 引文 斯高帕斯(Scopus)

摘要

A new deep-well quantum-cascade laser (QCL) design, for which the barrier layers in the active region are tapered such that their conduction band edges increase in energy from the injection barrier to the exit barrier, results in significant suppression of the carrier leakage in 4.8m-emitting devices. For heatsink temperatures in the 20-60°C range, the characteristic temperature coefficients for threshold, T 0, and slope efficiency, T 1, reach values as high as 231K and 797K, respectively. The T 1 values are more than a factor of two higher than the best reported values for high-performance, 4.6-4.9 μm-emitting QCLs of similar injector-doping level. At 20°C, the threshold-current density for uncoated, 30-period, 3mm-long devices is only ∼1.55kA/cm 2.

原文英語
頁(從 - 到)234-235
頁數2
期刊Electronics Letters
48
發行號4
DOIs
出版狀態已發佈 - 2012 2月 16
對外發佈

ASJC Scopus subject areas

  • 電氣與電子工程

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