Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

H. H. Hsu, C. H. Cheng*, C. K. Lin, K. Y. Chen, Y. L. Lin

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.

原文英語
主出版物標題Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
頁面145-150
頁數6
DOIs
出版狀態已發佈 - 2013
事件2012 MRS Fall Meeting - Boston, MA, 美国
持續時間: 2012 11月 252012 11月 30

出版系列

名字Materials Research Society Symposium Proceedings
1490
ISSN(列印)0272-9172

其他

其他2012 MRS Fall Meeting
國家/地區美国
城市Boston, MA
期間2012/11/252012/11/30

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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