Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

H. H. Hsu; C. H. Cheng; C. K. Lin; K. Y. Chen; Y. L. Lin

doi:10.1557/opl.2012.1645

Tantalum nitride for copper diffusion blocking on thin film (BiSb) ₂Te₃

H. H. Hsu, C. H. Cheng^*, C. K. Lin, K. Y. Chen, Y. L. Lin

^*此作品的通信作者

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)₂Te₃ thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)₂Te ₃ thermoelectric layer.

原文	英語
主出版物標題	Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
頁面	145-150
頁數	6
DOIs	https://doi.org/10.1557/opl.2012.1645
出版狀態	已發佈 - 2013
事件	2012 MRS Fall Meeting - Boston, MA, 美国持續時間: 2012 11月 25 → 2012 11月 30

出版系列

名字	Materials Research Society Symposium Proceedings
卷	1490
ISSN（列印）	0272-9172

其他

其他	2012 MRS Fall Meeting
國家/地區	美国
城市	Boston, MA
期間	2012/11/25 → 2012/11/30

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

存取文件

10.1557/opl.2012.1645

其它文件與鏈接

引用此

Hsu, HH, Cheng, CH, Lin, CK, Chen, KY & Lin, YL 2013, Tantalum nitride for copper diffusion blocking on thin film (BiSb) ₂Te₃. 於 Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration. Materials Research Society Symposium Proceedings, 卷 1490, 頁 145-150, 2012 MRS Fall Meeting, Boston, MA, 美国, 2012/11/25. https://doi.org/10.1557/opl.2012.1645

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