Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

H. H. Hsu, Chun-Hu Cheng, C. K. Lin, K. Y. Chen, Y. L. Lin

研究成果: 書貢獻/報告類型會議貢獻

摘要

This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te 3 thermoelectric layer.

原文英語
主出版物標題Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration
頁面145-150
頁數6
DOIs
出版狀態已發佈 - 2013 十一月 26
事件2012 MRS Fall Meeting - Boston, MA, 美国
持續時間: 2012 十一月 252012 十一月 30

出版系列

名字Materials Research Society Symposium Proceedings
1490
ISSN(列印)0272-9172

其他

其他2012 MRS Fall Meeting
國家美国
城市Boston, MA
期間12/11/2512/11/30

    指紋

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此

Hsu, H. H., Cheng, C-H., Lin, C. K., Chen, K. Y., & Lin, Y. L. (2013). Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3 Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration (頁 145-150). (Materials Research Society Symposium Proceedings; 卷 1490). https://doi.org/10.1557/opl.2012.1645