Symmetry regimes for circular photocurrents in monolayer MoSe2

Jorge Quereda*, Talieh S. Ghiasi, Jhih Shih You, Jeroen van den Brink, Bart J. van Wees, Caspar H. van der Wal

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

57 引文 斯高帕斯(Scopus)

摘要

In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPCs) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution.

原文英語
文章編號3346
期刊Nature Communications
9
發行號1
DOIs
出版狀態已發佈 - 2018 12月 1
對外發佈

ASJC Scopus subject areas

  • 一般化學
  • 一般生物化學,遺傳學和分子生物學
  • 一般物理與天文學

指紋

深入研究「Symmetry regimes for circular photocurrents in monolayer MoSe2」主題。共同形成了獨特的指紋。

引用此