摘要
The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InClx (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.
原文 | 英語 |
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頁(從 - 到) | 46-54 |
頁數 | 9 |
期刊 | Surface Science |
卷 | 418 |
發行號 | 1 |
DOIs | |
出版狀態 | 已發佈 - 1998 11月 27 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 凝聚態物理學
- 表面和介面
- 表面、塗料和薄膜
- 材料化學