Surface etching of InP(100) by chlorine

Wei Hsiu Hung*, Jyh Tsung Hsieh, Huey Liang Hwang, Hsin Yen Hwang, Che Chen Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

17 引文 斯高帕斯(Scopus)

摘要

The cleaning and etching of the InP(100) surface by chlorine gas is investigated using synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4 × 2 configuration is obtained by ion sputtering or chlorine etching, followed by annealing to 650 K. The clean surface obtained by chlorine etching and annealing is indium-rich with the surface indium atoms showing metallic characterics. The chemisorption of chlorine leads to the formation of various InClx (x = 1-3) and PC1 species on the InP surface at 110 K and their corresponding chemical shifts are assigned. The chlorination of the InP surface causes surface band bending by about 0.36 eV at the saturation coverage. Argon-ion sputtering enhances the surface reactivity so that the sputtered surface can be chlorinated to a higher extent than the clean surface.

原文英語
頁(從 - 到)46-54
頁數9
期刊Surface Science
418
發行號1
DOIs
出版狀態已發佈 - 1998 十一月 27

ASJC Scopus subject areas

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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