Surface electron accumulation and enhanced hydrogen evolution reaction in MoSe2 basal planes

Y. S. Chang, C. Y. Chen, C. J. Ho, C. M. Cheng, H. R. Chen, T. Y. Fu, Y. T. Huang, S. W. Ke, H. Y. Du, K. Y. Lee, L. C. Chao, L. C. Chen, K. H. Chen, Y. W. Chu, R. S. Chen

研究成果: 雜誌貢獻期刊論文同行評審

指紋

深入研究「Surface electron accumulation and enhanced hydrogen evolution reaction in MoSe<sub>2</sub> basal planes」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Chemical Compounds