Surface conduction mechanism in AlGaN/GaN high electron mobility transistors with pre-gate treatment

Chun Hu Cheng, Tsu Chang, Sheng Yu Liao, Wei Der Ho, Yen Cen Shiau, Jen Shu Sen, H. M. Chang

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

From our study, we performed an oxygen-plasma pre-gate treatment on AlGaN/GaN HEMT deivce and found that Schottky height lowering after oxygen treatment was ascribed to surface states in AlGaN barrier layer near gate region that might cause output impedance variation, output power degradation and reliability issue. The surface defect traps with a shallow trapping level near gate region are responsible for triggering the behavior of parasitic resistance change. Also, these shallow traps easily generate electron emission current via a trap-assisted process, which can contribute an additional gate leakage current. Thus, such process-induced defect issue may play an important role to affect transistor output characteristics, especially for RF characteristics such as cut-off frequency and RF power gain.

原文英語
主出版物標題ECS Transactions
發行者Electrochemical Society Inc.
頁面53-60
頁數8
版本46
ISBN(電子)9781607685395
DOIs
出版狀態已發佈 - 2013

出版系列

名字ECS Transactions
號碼46
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

ASJC Scopus subject areas

  • 工程 (全部)

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