Surface conduction mechanism in AlGaN/GaN high electron mobility transistors with pre-gate treatment

Chun-Hu Cheng, Tsu Chang, Sheng Yu Liao, Wei Der Ho, Yen Cen Shiau, Jen Shu Sen, H. M. Chang

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

摘要

From our study, we performed an oxygen-plasma pre-gate treatment on AlGaN/GaN HEMT deivce and found that Schottky height lowering after oxygen treatment was ascribed to surface states in AlGaN barrier layer near gate region that might cause output impedance variation, output power degradation and reliability issue. The surface defect traps with a shallow trapping level near gate region are responsible for triggering the behavior of parasitic resistance change. Also, these shallow traps easily generate electron emission current via a trap-assisted process, which can contribute an additional gate leakage current. Thus, such process-induced defect issue may play an important role to affect transistor output characteristics, especially for RF characteristics such as cut-off frequency and RF power gain.

原文英語
頁(從 - 到)53-60
頁數8
期刊ECS Transactions
50
發行號46
DOIs
出版狀態已發佈 - 2012 十二月 1

ASJC Scopus subject areas

  • Engineering(all)

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