TY - JOUR
T1 - Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
AU - Feng, Z. C.
AU - Lin, H. C.
AU - Zhao, J.
AU - Yang, T. R.
AU - Ferguson, I.
N1 - Funding Information:
We acknowledge the help and support from Drs. N. Schumaker, R.A. Stall, E. Armour, Z.Z. Wan and F.H. Pollak. The work at National Taiwan University was supported by funds from National Science Council of Republic of China, NSC 93-2218-E-002-011 and 93-2215-E-002-035.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.
AB - Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.
KW - AlGaInP
KW - Atomic force microscopy (AFM)
KW - Metalorganic chemical vapor deposition (MOCVD)
KW - Nomarski microscopy
KW - Photoluminescence
KW - Raman scattering
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U2 - 10.1016/j.tsf.2005.07.070
DO - 10.1016/j.tsf.2005.07.070
M3 - Conference article
AN - SCOPUS:30944438472
SN - 0040-6090
VL - 498
SP - 167
EP - 173
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
Y2 - 12 November 2004 through 14 November 2004
ER -