Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

Z. C. Feng*, H. C. Lin, J. Zhao, T. R. Yang, I. Ferguson

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.

原文英語
頁(從 - 到)167-173
頁數7
期刊Thin Solid Films
498
發行號1-2
DOIs
出版狀態已發佈 - 2006 三月 1
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 2004 十一月 122004 十一月 14

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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