Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

Z. C. Feng, H. C. Lin, J. Zhao, T. R. Yang, I. Ferguson

研究成果: 雜誌貢獻Conference article同行評審

13 引文 斯高帕斯(Scopus)


Two sets of (AlxGa1-x)0.5In 0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions was found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spatial correlation model fitting leads to information about the order of the sample crystalline quality. The optimum growth conditions have been obtained from our comprehensive analyses.

頁(從 - 到)167-173
期刊Thin Solid Films
出版狀態已發佈 - 2006 三月 1
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 2004 十一月 122004 十一月 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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