Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

Yung Chi Yao*, Yi Ching Chen, Ya Ju Lee

*此作品的通信作者

    研究成果: 書貢獻/報告類型會議論文篇章

    摘要

    Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

    原文英語
    主出版物標題Light-Emitting Diodes
    主出版物子標題Materials, Devices, and Applications for Solid State Lighting XVI
    DOIs
    出版狀態已發佈 - 2012 三月 5
    事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, 美国
    持續時間: 2012 一月 242012 一月 26

    出版系列

    名字Proceedings of SPIE - The International Society for Optical Engineering
    8278
    ISSN(列印)0277-786X

    其他

    其他Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
    國家/地區美国
    城市San Francisco, CA
    期間2012/01/242012/01/26

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 凝聚態物理學
    • 電腦科學應用
    • 應用數學
    • 電氣與電子工程

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