Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM

C. Y. Liao; Z. F. Lou; C. Y. Lin; A. Senapati; R. Karmakar; K. Y. Hsiang; Z. X. Li; W. C. Ray; J. Y. Lee; P. H. Chen; F. S. Chang; H. H. Tseng; C. C. Wang; J. H. Tsai; Y. T. Tang; S. T. Chang; C. W. Liu; S. Maikap; M. H. Lee

doi:10.1109/IEDM45625.2022.10019369

Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM

C. Y. Liao, Z. F. Lou, C. Y. Lin, A. Senapati, R. Karmakar, K. Y. Hsiang, Z. X. Li, W. C. Ray, J. Y. Lee, P. H. Chen, F. S. Chang, H. H. Tseng, C. C. Wang, J. H. Tsai, Y. T. Tang, S. T. Chang, C. W. Liu, S. Maikap^*, M. H. Lee^*

^*此作品的通信作者

研究成果: 書貢獻/報告類型 › 會議論文篇章

9 引文斯高帕斯（Scopus）

摘要

Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

原文	英語
主出版物標題	2022 International Electron Devices Meeting, IEDM 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	3661-3664
頁數	4
ISBN（電子）	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019369
出版狀態	已發佈 - 2022
事件	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, 美国持續時間: 2022 12月 3 → 2022 12月 7

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2022-December
ISSN（列印）	0163-1918

會議

會議	2022 International Electron Devices Meeting, IEDM 2022
國家/地區	美国
城市	San Francisco
期間	2022/12/03 → 2022/12/07

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
材料化學
電氣與電子工程

存取文件

10.1109/IEDM45625.2022.10019369

其它文件與鏈接

引用此

Liao, C. Y., Lou, Z. F., Lin, C. Y., Senapati, A., Karmakar, R., Hsiang, K. Y., Li, Z. X., Ray, W. C., Lee, J. Y., Chen, P. H., Chang, F. S., Tseng, H. H., Wang, C. C., Tsai, J. H., Tang, Y. T., Chang, S. T., Liu, C. W., Maikap, S., & Lee, M. H. (2022). Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. 於 2022 International Electron Devices Meeting, IEDM 2022 (頁 3661-3664). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019369

Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. / Liao, C. Y.; Lou, Z. F.; Lin, C. Y. 等.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3661-3664 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Liao, CY, Lou, ZF, Lin, CY, Senapati, A, Karmakar, R, Hsiang, KY, Li, ZX, Ray, WC, Lee, JY, Chen, PH, Chang, FS, Tseng, HH, Wang, CC, Tsai, JH, Tang, YT, Chang, ST, Liu, CW, Maikap, S & Lee, MH 2022, Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. 於 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2022-December, Institute of Electrical and Electronics Engineers Inc., 頁 3661-3664, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, 美国, 2022/12/03. https://doi.org/10.1109/IEDM45625.2022.10019369

Liao CY, Lou ZF, Lin CY, Senapati A, Karmakar R, Hsiang KY 等. Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. 於 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3661-3664. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019369

Liao, C. Y. ; Lou, Z. F. ; Lin, C. Y. 等. / Superlattice HfO₂-ZrO₂based Ferro-Stack HfZrO₂FeFETs : Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹cycles for Multibit NVM. 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. 頁 3661-3664 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{df5d67c367b944fe84124dcf93358bcb,

title = "Superlattice HfO2-ZrO2based Ferro-Stack HfZrO2FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109cycles for Multibit NVM",

abstract = "Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.",

author = "Liao, {C. Y.} and Lou, {Z. F.} and Lin, {C. Y.} and A. Senapati and R. Karmakar and Hsiang, {K. Y.} and Li, {Z. X.} and Ray, {W. C.} and Lee, {J. Y.} and Chen, {P. H.} and Chang, {F. S.} and Tseng, {H. H.} and Wang, {C. C.} and Tsai, {J. H.} and Tang, {Y. T.} and Chang, {S. T.} and Liu, {C. W.} and S. Maikap and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019369",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3661--3664",

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T2 - 2022 International Electron Devices Meeting, IEDM 2022

AU - Liao, C. Y.

AU - Lou, Z. F.

AU - Lin, C. Y.

AU - Senapati, A.

AU - Karmakar, R.

AU - Hsiang, K. Y.

AU - Li, Z. X.

AU - Ray, W. C.

AU - Lee, J. Y.

AU - Chen, P. H.

AU - Chang, F. S.

AU - Tseng, H. H.

AU - Wang, C. C.

AU - Tsai, J. H.

AU - Tang, Y. T.

AU - Chang, S. T.

AU - Liu, C. W.

AU - Maikap, S.

AU - Lee, M. H.

PY - 2022

Y1 - 2022

N2 - Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

AB - Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 3661

EP - 3664

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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