MgB2 thin films were deposited, at low temperature substrates, in situ, on a polished c-cut sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-4 terminal method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, Hc2(T) and irreversibility field Hirr(T) versus temperature were determinated. The Hall density of charge are slightly temperature dependence and positive in normal state. The critical temperature of 30-32 K and critical current density of 106-107 A/cm2 at 4, 2 K were obtained. Using extracted data, the coherence length ξ0, anisotropic coefficient γ and penetration depth λL were calculated.
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