Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric

N. H. Chen, Z. W. Zheng, C. H. Cheng*, F. S. Yeh

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Using nano-crystallized aluminum oxynitride (nc-AlOxN y) dielectric, the Al/nc-AlOxNy/AlN/n +-Si resistive random access memory (RRAM) with ultralow sub-micro watt power is reported in this study. The RRAM devices exhibit excellent memory characteristics, including reproducible bipolar resistive switching under >100 times memory window, very low set and reset current of ∼10 nA, high voltage distributions and good data retention. It is demonstrated that the reset current decreases as the compliance current decreases, which provides an approach to lower the power consumption. The conduction mechanisms for high- and low-resistance states are dominated by Frenkel-Poole conduction and space-charge-limited current, respectively. These good memory characteristics in this RRAM show great potential in future high-performance memory applications.

原文英語
頁(從 - 到)575-579
頁數5
期刊Applied Physics A: Materials Science and Processing
116
發行號2
DOIs
出版狀態已發佈 - 2014 八月

ASJC Scopus subject areas

  • 化學 (全部)
  • 材料科學(全部)

指紋

深入研究「Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric」主題。共同形成了獨特的指紋。

引用此