Using nano-crystallized aluminum oxynitride (nc-AlOxN y) dielectric, the Al/nc-AlOxNy/AlN/n +-Si resistive random access memory (RRAM) with ultralow sub-micro watt power is reported in this study. The RRAM devices exhibit excellent memory characteristics, including reproducible bipolar resistive switching under >100 times memory window, very low set and reset current of ∼10 nA, high voltage distributions and good data retention. It is demonstrated that the reset current decreases as the compliance current decreases, which provides an approach to lower the power consumption. The conduction mechanisms for high- and low-resistance states are dominated by Frenkel-Poole conduction and space-charge-limited current, respectively. These good memory characteristics in this RRAM show great potential in future high-performance memory applications.
|頁（從 - 到）||575-579|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||已發佈 - 2014 八月|
ASJC Scopus subject areas
- 化學 (全部)