Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire

Shantanu Saha, Yu Chen Chang, Tilo Hongwei Yang, Anthony Rice, Arnob Ghosh, Weicheng You, Mary Crawford, Ting Hua Lu, Yann Wen Lan, Shamsul Arafin*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge-and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.

原文英語
文章編號215702
期刊Nanotechnology
33
發行號21
DOIs
出版狀態已發佈 - 2022 5月 21

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

指紋

深入研究「Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire」主題。共同形成了獨特的指紋。

引用此