Sub-60mV-swing negative-capacitance FinFET without hysteresis

Kai Shin Li, Pin Guang Chen, Tung Yan Lai, Chang Hsien Lin, Cheng Chih Cheng, Chun Chi Chen, Yun Jie Wei, Yun Fang Hou, Ming Han Liao, Min Hung Lee, Min Cheng Chen, Jia Min Sheih, Wen Kuan Yeh, Fu Liang Yang, Sayeef Salahuddin, Chenming Hu

研究成果: 書貢獻/報告類型會議論文篇章

181 引文 斯高帕斯(Scopus)

摘要

In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

原文英語
主出版物標題2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面22.6.1-22.6.4
ISBN(電子)9781467398930
DOIs
出版狀態已發佈 - 2015 二月 16
事件61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, 美国
持續時間: 2015 十二月 72015 十二月 9

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(列印)0163-1918

其他

其他61st IEEE International Electron Devices Meeting, IEDM 2015
國家/地區美国
城市Washington
期間2015/12/072015/12/09

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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