摘要
The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (Dit) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.
原文 | 英語 |
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頁(從 - 到) | 105-109 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 517 |
發行號 | 1 |
DOIs | |
出版狀態 | 已發佈 - 2008 11月 3 |
ASJC Scopus subject areas
- 電子、光磁材料
- 表面和介面
- 表面、塗料和薄膜
- 金屬和合金
- 材料化學