Studying the impact of carbon on device performance for strained-Si MOSFETs

M. H. Lee; S. T. Chang; C. Y. Peng; B. F. Hsieh; S. Maikap; S. H. Liao

doi:10.1016/j.tsf.2008.08.087

Studying the impact of carbon on device performance for strained-Si MOSFETs

M. H. Lee, S. T. Chang^*, C. Y. Peng, B. F. Hsieh, S. Maikap, S. H. Liao

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (D_it) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.

原文	英語
頁（從 - 到）	105-109
頁數	5
期刊	Thin Solid Films
卷	517
發行號	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.087
出版狀態	已發佈 - 2008 11月 3

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2008.08.087

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title = "Studying the impact of carbon on device performance for strained-Si MOSFETs",

abstract = "The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (Dit) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.",

keywords = "Alloy scattering, Carbon, Interface state density, Mobility, SiGe buffer, Strain, Strained-Si:C, Transmission electron microscopy",

author = "Lee, {M. H.} and Chang, {S. T.} and Peng, {C. Y.} and Hsieh, {B. F.} and S. Maikap and Liao, {S. H.}",

note = "Funding Information: The authors are very grateful for the equipment and instrument support by Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan. ",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.087",

language = "English",

volume = "517",

pages = "105--109",

journal = "Thin Solid Films",

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T1 - Studying the impact of carbon on device performance for strained-Si MOSFETs

AU - Lee, M. H.

AU - Chang, S. T.

AU - Peng, C. Y.

AU - Hsieh, B. F.

AU - Maikap, S.

AU - Liao, S. H.

N1 - Funding Information: The authors are very grateful for the equipment and instrument support by Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (Dit) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.

AB - The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (Dit) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.

KW - Alloy scattering

KW - Carbon

KW - Interface state density

KW - Mobility

KW - SiGe buffer

KW - Strain

KW - Strained-Si:C

KW - Transmission electron microscopy

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JO - Thin Solid Films

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Studying the impact of carbon on device performance for strained-Si MOSFETs

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