Studying the impact of carbon on device performance for strained-Si MOSFETs

M. H. Lee, S. T. Chang*, C. Y. Peng, B. F. Hsieh, S. Maikap, S. H. Liao


研究成果: 雜誌貢獻期刊論文同行評審


The strained-Si:C long channel MOSFET on a relaxed SiGe buffer is demonstrated in this study. The extracted electron mobility showed an enhancement of ~40% with the incorporation of 0.25% carbon in strained-Si long channel NMOSFETs. However, no improvement was seen in the output characteristics of the strained-Si:C PMOSFET. The performance enhancement seen is less than the theoretical prediction for increasing carbon content; this is due to the high alloy scattering potential with carbon incorporation, high interface state density (Dit) at the oxide/strained-Si:C interface and interstitial carbon induced Coulomb scattering. However, increased amounts of C may result in degraded device performance. Therefore, a balance must be struck to minimize C-induced extra Coulomb and alloy scattering rates in the fabrication of these devices.

頁(從 - 到)105-109
期刊Thin Solid Films
出版狀態已發佈 - 2008 11月 3

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學


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