Study on the ESD-induced gate-oxide breakdown and the protection solution in 28nm high-k metal-gate CMOS technology

Chun Yu Lin, Ming Dou Ker, Pin Hsin Chang, Wen Tai Wang

研究成果: 書貢獻/報告類型會議論文篇章

7 引文 斯高帕斯(Scopus)

摘要

To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.

原文英語
主出版物標題2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781467393621
DOIs
出版狀態已發佈 - 2016 三月 22
事件10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015 - Anchorage, 美国
持續時間: 2015 九月 122015 九月 16

出版系列

名字2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

其他

其他10th IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
國家美国
城市Anchorage
期間2015/09/122015/09/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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