TY - JOUR
T1 - Study of an on-line precision microgroove generating process on silicon wafer using a developed ultra-thin diamond wheel-tool
AU - Chen, Shun Tong
AU - Lin, Shing Jr
PY - 2011/3
Y1 - 2011/3
N2 - This study presents a novel and economical method for precisely developing an ultra-thin diamond grinding wheel-tool and using the finished wheel-tool to on-line fabricate crisscross microgrooves on silicon wafer. The wheel-tool blank is made of diamond grain of 0-2 μm grade via a designed micro co-deposition. A non-continuous cathode design, in which current crowding effect can be suppressed, is used to obtain a diamond wheel-tool with good surface characteristics. With abrasive content of 8 g/l, a suitable interval chip-pocket of 2-3 μm can be generated. The grinding wheel blank is thinned and dressed simultaneously down to a thickness of 15 μm using micro wire Electro Discharge Dressing (w-EDD). The finished wheel-tool is directly utilized to grind the crisscross microgrooves on the silicon wafer using 'high-speed and fast-shallow grinding' technique. A grinding depth of 0.5 μm per stroke is exactly controlled to ensure that the removal mechanism transfers to a ductile grinding mode. The width, depth and surface roughness Ra of the microgrooves are 15 μm, 9 μm and 0.087 μm, respectively.
AB - This study presents a novel and economical method for precisely developing an ultra-thin diamond grinding wheel-tool and using the finished wheel-tool to on-line fabricate crisscross microgrooves on silicon wafer. The wheel-tool blank is made of diamond grain of 0-2 μm grade via a designed micro co-deposition. A non-continuous cathode design, in which current crowding effect can be suppressed, is used to obtain a diamond wheel-tool with good surface characteristics. With abrasive content of 8 g/l, a suitable interval chip-pocket of 2-3 μm can be generated. The grinding wheel blank is thinned and dressed simultaneously down to a thickness of 15 μm using micro wire Electro Discharge Dressing (w-EDD). The finished wheel-tool is directly utilized to grind the crisscross microgrooves on the silicon wafer using 'high-speed and fast-shallow grinding' technique. A grinding depth of 0.5 μm per stroke is exactly controlled to ensure that the removal mechanism transfers to a ductile grinding mode. The width, depth and surface roughness Ra of the microgrooves are 15 μm, 9 μm and 0.087 μm, respectively.
KW - Co-deposition
KW - High-speed and fast-shallow grinding (HSFSG)
KW - Microgrooves
KW - Wire electro discharge dressing (w-EDD)
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U2 - 10.1016/j.diamond.2011.01.033
DO - 10.1016/j.diamond.2011.01.033
M3 - Article
AN - SCOPUS:79551612687
SN - 0925-9635
VL - 20
SP - 339
EP - 342
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 3
ER -