摘要
This study demonstrates the feasibility of producing a tantalum nitride (TaN) thin film as a diffusion barrier and buffer layer for p-type bismuth telluride [(Bi,Sb)2Te3] thermoelectric devices. A network of TaN with nitrogen (N) incorporation is structurally more stable on (Bi,Sb)2Te3 than the conventional Ni diffusion barrier because of less inter-diffusion and a greater likelihood of stoichiometry in the TaN/(Bi,Sb)2Te3 interface. The atomic inter-diffusion between the barrier layers and (Bi,Sb)2Te3 was evaluated in terms of interface adhesion energy using nanoscratching, and proved with first-principles calculations.
原文 | 英語 |
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文章編號 | 053902 |
期刊 | Applied Physics Letters |
卷 | 103 |
發行號 | 5 |
DOIs | |
出版狀態 | 已發佈 - 2013 7月 29 |
ASJC Scopus subject areas
- 物理與天文學(雜項)