Structural stability of thermoelectric diffusion barriers: Experimental results and first principles calculations

Hsiao Hsuan Hsu, Chun Hu Cheng*, Yu Li Lin, Shan Haw Chiou, Chiung Hui Huang, Chin Pao Cheng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

This study demonstrates the feasibility of producing a tantalum nitride (TaN) thin film as a diffusion barrier and buffer layer for p-type bismuth telluride [(Bi,Sb)2Te3] thermoelectric devices. A network of TaN with nitrogen (N) incorporation is structurally more stable on (Bi,Sb)2Te3 than the conventional Ni diffusion barrier because of less inter-diffusion and a greater likelihood of stoichiometry in the TaN/(Bi,Sb)2Te3 interface. The atomic inter-diffusion between the barrier layers and (Bi,Sb)2Te3 was evaluated in terms of interface adhesion energy using nanoscratching, and proved with first-principles calculations.

原文英語
文章編號053902
期刊Applied Physics Letters
103
發行號5
DOIs
出版狀態已發佈 - 2013 七月 29

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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