Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

Chuan Hsi Liu, Pi Chun Juan, Chin Pao Cheng, Guan Ting Lai, Huan Lee, Yi Kuan Chen, Yu Wei Liu, Chih Wei Hsu

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850°C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.

原文英語
主出版物標題INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
頁面1256-1257
頁數2
DOIs
出版狀態已發佈 - 2010 五月 5
事件2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, 中国
持續時間: 2010 一月 32010 一月 8

出版系列

名字INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

其他

其他2010 3rd International Nanoelectronics Conference, INEC 2010
國家中国
城市Hongkong
期間10/1/310/1/8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

指紋 深入研究「Structural properties of ultra-thin Y<sub>2</sub>O<sub>3</sub> gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)」主題。共同形成了獨特的指紋。

  • 引用此

    Liu, C. H., Juan, P. C., Cheng, C. P., Lai, G. T., Lee, H., Chen, Y. K., Liu, Y. W., & Hsu, C. W. (2010). Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS). 於 INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (頁 1256-1257). [5424914] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424914