Structural differences between deuterated and hydrogenated silicon nitride/oxynitride

An Shih*, Shin Hung Yeh, Si Chen Lee, T. R. Yang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

Hydrogenated and deuterated silicon nitride (a-SiNx:H and a-SiNx :D) and silicon oxynitride (a-SiOxNy, :H and a-SiOxNy :D) films are prepared by plasma-enhanced chemical vapor deposition. Their transmission and photoluminescence spectra were measured. Both the photoluminescence and transmission spectra show that the deuterated films have higher energy gaps than those of the hydrogenated films in the same growth condition. The infrared absorption spectra of these samples are identified and compared in detail. From the infrared spectra, the interaction between N-D bond rocking vibration and Si-N bond stretching vibration is observed, which pushes N-D bond rocking vibration to a higher energy. It is also observed that the refractive index of deuterated film is lower than the hydrogenated film in the same growth condition due to its lower density.

原文英語
頁(從 - 到)5355-5361
頁數7
期刊Journal of Applied Physics
89
發行號10
DOIs
出版狀態已發佈 - 2001 五月 15
對外發佈

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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