Structural and electronic differences between deuterated and hydrogenated amorphous silicon

An Shih, Jiun Lin Yeh, Si Chen Lee*, T. R. Yang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.

原文英語
頁(從 - 到)1684-1687
頁數4
期刊Journal of Applied Physics
88
發行號3
DOIs
出版狀態已發佈 - 2000 八月
對外發佈

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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