摘要
Both as-deposited and plasma-treated hydrogenated and deuterated amorphous silicon (a-Si:H and a-Si:D) films are prepared by plasma-enhanced chemical vapor deposition. Their structural and electronic characteristics are studied and compared. It is found that the deuterium concentration of a-Si:D is higher than the hydrogen concentration of a-Si:H in as-deposited samples, but is less in plasma-treated samples, which is consistent with the photoluminescence spectra. Besides, the proportionality constants relating the integrated stretching mode absorption to the concentrations of Si-D and Si-H bonds were determined, i.e., 1 × 1020 for Si-D and 6.9 × 1019 for Si-H, by means of secondary ion mass spectrometry.
原文 | 英語 |
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頁(從 - 到) | 1684-1687 |
頁數 | 4 |
期刊 | Journal of Applied Physics |
卷 | 88 |
發行號 | 3 |
DOIs | |
出版狀態 | 已發佈 - 2000 8月 |
ASJC Scopus subject areas
- 一般物理與天文學