Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Shiang Shiou Yen, Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng*, Chien Hung Tung, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin, Chun Yen Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high- and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 °C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 × 10-14A/μm at a low operating voltage of 4V.

原文英語
文章編號04DF05
期刊Japanese Journal of Applied Physics
54
發行號4
DOIs
出版狀態已發佈 - 2015 四月 1

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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