摘要
The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 77-80 |
| 頁數 | 4 |
| 期刊 | Microelectronic Engineering |
| 卷 | 138 |
| DOIs | |
| 出版狀態 | 已發佈 - 2015 4月 20 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 表面、塗料和薄膜
- 電氣與電子工程
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