@article{c4a91cca9dfb41c5a55fce8222a7f75e,
title = "Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications",
abstract = "The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.",
keywords = "Flexible, IGZO TFT, Stress",
author = "Lee, {M. H.} and Hsu, {S. M.} and Shen, {J. D.} and C. Liu",
note = "Funding Information: The authors gratefully acknowledge the financial support from the National Science Council (NSC), Taiwan under Grant Nos. 103-2221-E-003-023 , and 102-2221-E-003-030-MY3 . The computing were supported by National Center for High-Performance Computing (NCHC), Taiwan. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",
year = "2015",
month = apr,
day = "20",
doi = "10.1016/j.mee.2015.02.020",
language = "English",
volume = "138",
pages = "77--80",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
}