Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

M. H. Lee; S. M. Hsu; J. D. Shen; C. Liu

doi:10.1016/j.mee.2015.02.020

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

M. H. Lee^*, S. M. Hsu, J. D. Shen, C. Liu

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiO_x has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

原文	英語
頁（從 - 到）	77-80
頁數	4
期刊	Microelectronic Engineering
卷	138
DOIs	https://doi.org/10.1016/j.mee.2015.02.020
出版狀態	已發佈 - 2015 4月 20

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mee.2015.02.020

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title = "Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications",

abstract = "The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.",

keywords = "Flexible, IGZO TFT, Stress",

author = "Lee, {M. H.} and Hsu, {S. M.} and Shen, {J. D.} and C. Liu",

year = "2015",

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day = "20",

doi = "10.1016/j.mee.2015.02.020",

language = "English",

volume = "138",

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journal = "Microelectronic Engineering",

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TY - JOUR

T1 - Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

AU - Lee, M. H.

AU - Hsu, S. M.

AU - Shen, J. D.

AU - Liu, C.

PY - 2015/4/20

Y1 - 2015/4/20

N2 - The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

AB - The stress analysis of IGZO TFT in structures, dielectrics, and rolling curvatures using finite element method is proposed. The inverted-coplanar with SiOx has the smallest stress for mechanical rolling. The local extreme stress would also induce film cracks or peeling at the corner. For example, inverted-coplanar structure has the maximum stress at the corner of IGZO/Al with -0.65 GPa (x-direction stress), -0.22 GPa (y-direction stress), and -0.21 GPa (shear stress). The stress of IGZO TFT with high PPI under mechanical rolling is also discussed.

KW - Flexible

KW - IGZO TFT

KW - Stress

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U2 - 10.1016/j.mee.2015.02.020

DO - 10.1016/j.mee.2015.02.020

M3 - Article

AN - SCOPUS:84923782284

SN - 0167-9317

VL - 138

SP - 77

EP - 80

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

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