We propose for the first time the tensile-strained Si1-xC x channel on SiGe substrate CMOS devices. Theoretical calculations show enhancement of both electron and hole mobilities in strained Si 1-xCx on SiGe substrates as compared to Si. Furthermore, the added carbon can reduce outdiffusion of boron and phosphorous, so that the source/drain junction and channel has an abrupt doping distribution, preventing short-channel effect and minimizing device dimensions. With the benefit of strain in Si1-xCx alloy being more significant than in silicon, the MOSFET structure according to the idea uses Si1-xC x instead, providing better symmetry of the designed current driving force and speed, minimizing the device scale and enhancing the current driving force.
|出版狀態||已發佈 - 2004|
|事件||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, 美国|
持續時間: 2004 10月 3 → 2004 10月 8
|其他||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|期間||2004/10/03 → 2004/10/08|
ASJC Scopus subject areas
- 工程 (全部)