摘要
The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.
原文 | 英語 |
---|---|
頁(從 - 到) | 6147-6150 |
頁數 | 4 |
期刊 | Applied Surface Science |
卷 | 254 |
發行號 | 19 |
DOIs | |
出版狀態 | 已發佈 - 2008 7月 30 |
ASJC Scopus subject areas
- 化學 (全部)
- 凝聚態物理學
- 物理與天文學 (全部)
- 表面和介面
- 表面、塗料和薄膜