Strained-Si with carbon incorporation for MOSFET source/drain engineering

M. H. Lee; S. T. Chang; S. W. Lee; P. S. Chen; K. W. Shen; W. C. Wang

doi:10.1016/j.apsusc.2008.02.179

Strained-Si with carbon incorporation for MOSFET source/drain engineering

M. H. Lee^*, S. T. Chang, S. W. Lee, P. S. Chen, K. W. Shen, W. C. Wang

^*此作品的通信作者

光電工程學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH ₃ SiH ₃ ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D _it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R _s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

原文	英語
頁（從 - 到）	6147-6150
頁數	4
期刊	Applied Surface Science
卷	254
發行號	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.179
出版狀態	已發佈 - 2008 7月 30

ASJC Scopus subject areas

化學 (全部)
凝聚態物理學
物理與天文學 (全部)
表面和介面
表面、塗料和薄膜

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10.1016/j.apsusc.2008.02.179

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title = "Strained-Si with carbon incorporation for MOSFET source/drain engineering",

abstract = " The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.",

keywords = "Methysilane, Strain, Strained-Si:C",

author = "Lee, {M. H.} and Chang, {S. T.} and Lee, {S. W.} and Chen, {P. S.} and Shen, {K. W.} and Wang, {W. C.}",

note = "Funding Information: The authors are grateful for discussion with Prof. C.W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and support by National Science Council (NSC 96-2112-M-003-013), National Nano Device Laboratories (NDL), and Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan.",

year = "2008",

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doi = "10.1016/j.apsusc.2008.02.179",

language = "English",

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T1 - Strained-Si with carbon incorporation for MOSFET source/drain engineering

AU - Lee, M. H.

AU - Chang, S. T.

AU - Lee, S. W.

AU - Chen, P. S.

AU - Shen, K. W.

AU - Wang, W. C.

N1 - Funding Information: The authors are grateful for discussion with Prof. C.W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and support by National Science Council (NSC 96-2112-M-003-013), National Nano Device Laboratories (NDL), and Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan.

PY - 2008/7/30

Y1 - 2008/7/30

N2 - The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

AB - The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

KW - Methysilane

KW - Strain

KW - Strained-Si:C

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JO - Applied Surface Science

JF - Applied Surface Science

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Strained-Si with carbon incorporation for MOSFET source/drain engineering

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