Strained-Si with carbon incorporation for MOSFET source/drain engineering

M. H. Lee*, S. T. Chang, S. W. Lee, P. S. Chen, K. W. Shen, W. C. Wang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.

原文英語
頁(從 - 到)6147-6150
頁數4
期刊Applied Surface Science
254
發行號19
DOIs
出版狀態已發佈 - 2008 七月 30

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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