Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses

Mu Chun Wang, Min Ru Peng, Liang Ru Ji, Heng Sheng Huang, Shuang Yuan Chen, Shea Jue Wang, Hong Wen Hsu, Wen Shiang Liao, Chuan-Hsi Liu

研究成果: 會議貢獻類型

1 引文 斯高帕斯(Scopus)

摘要

Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.

原文英語
頁面371-374
頁數4
DOIs
出版狀態已發佈 - 2013 五月 27
事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣
持續時間: 2013 二月 252013 二月 26

其他

其他2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家臺灣
城市Kaohsiung
期間13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wang, M. C., Peng, M. R., Ji, L. R., Huang, H. S., Chen, S. Y., Wang, S. J., Hsu, H. W., Liao, W. S., & Liu, C-H. (2013). Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses. 371-374. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣. https://doi.org/10.1109/ISNE.2013.6512370