Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices' 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.
|出版狀態||已發佈 - 2013 五月 27|
|事件||2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣|
持續時間: 2013 二月 25 → 2013 二月 26
|其他||2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013|
|期間||2013/02/25 → 2013/02/26|
ASJC Scopus subject areas
- Electrical and Electronic Engineering