Strained CMOS technology with Ge

Material Science

• Quantum Well 100%
• Devices 75%
• Strain 50%
• Nanocrystalline Material 50%
• Control Component 50%
• Film 25%
• Density 25%
• Hole Mobility 25%
• Dislocation 25%
• Buffer Layer 25%
• Epilayers 25%
• Electron Mobility 25%
• Schottky Barrier 25%
• Quantum Dot 25%
• Nucleation 25%

INIS

• germanium silicides 100%
• devices 50%
• quantum wells 40%
• control 20%
• layers 20%
• nanostructures 20%
• strains 20%
• dislocations 20%
• buffers 20%
• transport 10%
• applications 10%
• films 10%
• density 10%
• engineering 10%
• barriers 10%
• growth 10%
• nucleation 10%
• substrates 10%
• relaxation 10%
• speed 10%
• quantum dots 10%
• thickness 10%
• silicon carbides 10%
• hole mobility 10%
• shrinkage 10%
• electron mobility 10%

Engineering

• Misfit Dislocation 25%
• Dislocation Density 25%