The micro-sized cone-shaped GeSi alloy film was analyzed using micro-Raman scattering. The optical and electric properties of Si1-xGei x alloy grown on Si substrate were strongly influenced by the Ge concentration and the build-in strain. The sample structure was high doped pseduomorphic layers Ge0.1Si0.9/Ge0.4Si 0.6 grown on undoped Si buffer layer. The bending layers formed a micro-sized cone-shape film and one side of those layers were attached to the substrate. Results indicate that the Raman phonon shift of curved surface is strongly indepedent on the Ge concentration and the curvature of the film.