Strain of the micro-sized cone-shape GeSi alloy film determined by raman scattering

C. T. Chia, L. J. Chen, V. I. Mashanov, H. H. Cheng

研究成果: 書貢獻/報告類型會議貢獻

摘要

The micro-sized cone-shaped GeSi alloy film was analyzed using micro-Raman scattering. The optical and electric properties of Si1-xGei x alloy grown on Si substrate were strongly influenced by the Ge concentration and the build-in strain. The sample structure was high doped pseduomorphic layers Ge0.1Si0.9/Ge0.4Si 0.6 grown on undoped Si buffer layer. The bending layers formed a micro-sized cone-shape film and one side of those layers were attached to the substrate. Results indicate that the Raman phonon shift of curved surface is strongly indepedent on the Ge concentration and the curvature of the film.

原文英語
主出版物標題2004 1st IEEE International Conference on Group IV Photonics
頁面107-109
頁數3
出版狀態已發佈 - 2004 十二月 1
事件2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, 香港
持續時間: 2004 九月 292004 十月 1

出版系列

名字2004 1st IEEE International Conference on Group IV Photonics

其他

其他2004 1st IEEE International Conference on Group IV Photonics
國家香港
城市Hong Kong, China
期間04/9/2904/10/1

ASJC Scopus subject areas

  • Engineering(all)

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  • 引用此

    Chia, C. T., Chen, L. J., Mashanov, V. I., & Cheng, H. H. (2004). Strain of the micro-sized cone-shape GeSi alloy film determined by raman scattering. 於 2004 1st IEEE International Conference on Group IV Photonics (頁 107-109). (2004 1st IEEE International Conference on Group IV Photonics).