Strain modulation of SiGe virtual substrate

W. S. Tan; H. H. Cheng; V. I. Mashanov; Y. F. Wong; C. T. Chia

doi:10.1063/1.2197304

Strain modulation of SiGe virtual substrate

W. S. Tan^*
, H. H. Cheng
, V. I. Mashanov
, Y. F. Wong
, C. T. Chia

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

原文	英語
文章編號	162111
期刊	Applied Physics Letters
卷	88
發行號	16
DOIs	https://doi.org/10.1063/1.2197304
出版狀態	已發佈 - 2006 4月 17

ASJC Scopus subject areas

物理與天文學（雜項）

存取文件

10.1063/1.2197304

其它文件與鏈接

引用此

@article{62fbf0cb9947454a953b774b6dfbe5c4,

title = "Strain modulation of SiGe virtual substrate",

abstract = "We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.",

author = "Tan, \{W. S.\} and Cheng, \{H. H.\} and Mashanov, \{V. I.\} and Wong, \{Y. F.\} and Chia, \{C. T.\}",

note = "Funding Information: This work was supported by the National Science Council under Grant No. 94-2112-M-002 and United Microelectronics Corporation.",

year = "2006",

month = apr,

day = "17",

doi = "10.1063/1.2197304",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "16",

}

TY - JOUR

T1 - Strain modulation of SiGe virtual substrate

AU - Tan, W. S.

AU - Cheng, H. H.

AU - Mashanov, V. I.

AU - Wong, Y. F.

AU - Chia, C. T.

N1 - Funding Information: This work was supported by the National Science Council under Grant No. 94-2112-M-002 and United Microelectronics Corporation.

PY - 2006/4/17

Y1 - 2006/4/17

N2 - We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

AB - We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

UR - https://www.scopus.com/pages/publications/33646182476

UR - https://www.scopus.com/pages/publications/33646182476#tab=citedBy

U2 - 10.1063/1.2197304

DO - 10.1063/1.2197304

M3 - Article

AN - SCOPUS:33646182476

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162111

ER -

Strain modulation of SiGe virtual substrate

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此