Strain modulation of SiGe virtual substrate

W. S. Tan; H. H. Cheng; V. I. Mashanov; Y. F. Wong; C. T. Chia

doi:10.1063/1.2197304

Strain modulation of SiGe virtual substrate

W. S. Tan, H. H. Cheng, V. I. Mashanov, Y. F. Wong, C. T. Chia

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

原文	英語
文章編號	162111
期刊	Applied Physics Letters
卷	88
發行號	16
DOIs	https://doi.org/10.1063/1.2197304
出版狀態	已發佈 - 2006 四月 17

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2197304

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