Strain modulation of SiGe virtual substrate

W. S. Tan, H. H. Cheng, V. I. Mashanov, Y. F. Wong, C. T. Chia

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.

原文英語
文章編號162111
期刊Applied Physics Letters
88
發行號16
DOIs
出版狀態已發佈 - 2006 四月 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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