摘要
We report a technique for modulating the strain of SiGeSi virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGeSi interface.
原文 | 英語 |
---|---|
文章編號 | 162111 |
期刊 | Applied Physics Letters |
卷 | 88 |
發行號 | 16 |
DOIs | |
出版狀態 | 已發佈 - 2006 四月 17 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)