Strain-induced growth of SiO2 dots by liquid phase deposition

C. W. Liu; B. C. Hsu; K. F. Chen; M. H. Lee; C. R. Shie; Pang Shiu Chen

doi:10.1063/1.1542682

Strain-induced growth of SiO₂ dots by liquid phase deposition

C. W. Liu^*
, B. C. Hsu
, K. F. Chen
, M. H. Lee
, C. R. Shie
, Pang Shiu Chen

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Liquid phase deposition method was used to deposit SiO₂ dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

原文	英語
頁（從 - 到）	589-591
頁數	3
期刊	Applied Physics Letters
卷	82
發行號	4
DOIs	https://doi.org/10.1063/1.1542682
出版狀態	已發佈 - 2003 1月 27
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.1542682

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引用此

@article{3841ac60f6534e9b852830e61d06e2c9,

title = "Strain-induced growth of SiO2 dots by liquid phase deposition",

abstract = "Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.",

author = "Liu, \{C. W.\} and Hsu, \{B. C.\} and Chen, \{K. F.\} and Lee, \{M. H.\} and Shie, \{C. R.\} and Chen, \{Pang Shiu\}",

year = "2003",

month = jan,

day = "27",

doi = "10.1063/1.1542682",

language = "English",

volume = "82",

pages = "589--591",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "4",

}

TY - JOUR

T1 - Strain-induced growth of SiO2 dots by liquid phase deposition

AU - Liu, C. W.

AU - Hsu, B. C.

AU - Chen, K. F.

AU - Lee, M. H.

AU - Shie, C. R.

AU - Chen, Pang Shiu

PY - 2003/1/27

Y1 - 2003/1/27

N2 - Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

AB - Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

UR - https://www.scopus.com/pages/publications/0037468003

UR - https://www.scopus.com/pages/publications/0037468003#tab=citedBy

U2 - 10.1063/1.1542682

DO - 10.1063/1.1542682

M3 - Article

AN - SCOPUS:0037468003

SN - 0003-6951

VL - 82

SP - 589

EP - 591

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Strain-induced growth of SiO2 dots by liquid phase deposition

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Strain-induced growth of SiO₂ dots by liquid phase deposition