Strain-induced growth of SiO2 dots by liquid phase deposition

C. W. Liu; B. C. Hsu; K. F. Chen; M. H. Lee; C. R. Shie; Pang Shiu Chen

doi:10.1063/1.1542682

Strain-induced growth of SiO₂ dots by liquid phase deposition

C. W. Liu^*, B. C. Hsu, K. F. Chen, M. H. Lee, C. R. Shie, Pang Shiu Chen

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Liquid phase deposition method was used to deposit SiO₂ dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

原文	英語
頁（從 - 到）	589-591
頁數	3
期刊	Applied Physics Letters
卷	82
發行號	4
DOIs	https://doi.org/10.1063/1.1542682
出版狀態	已發佈 - 2003 1月 27
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.1542682

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引用此

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title = "Strain-induced growth of SiO2 dots by liquid phase deposition",

abstract = "Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.",

author = "Liu, {C. W.} and Hsu, {B. C.} and Chen, {K. F.} and Lee, {M. H.} and Shie, {C. R.} and Chen, {Pang Shiu}",

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AU - Chen, Pang Shiu

PY - 2003/1/27

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N2 - Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

AB - Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

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Strain-induced growth of SiO2 dots by liquid phase deposition

摘要

ASJC Scopus subject areas

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其它文件與鏈接

指紋

引用此

Strain-induced growth of SiO₂ dots by liquid phase deposition