Strain-induced growth of SiO2 dots by liquid phase deposition

C. W. Liu*, B. C. Hsu, K. F. Chen, M. H. Lee, C. R. Shie, Pang Shiu Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

Liquid phase deposition method was used to deposit SiO2 dots on the Si cap layers of self-assembled Ge dots. The step height and base width of the dots increased with the deposition time. A metal-oxide-semiconductor photodetector with a responsivity of 0.08 mA/W at 1550 nm was also fabricated.

原文英語
頁(從 - 到)589-591
頁數3
期刊Applied Physics Letters
82
發行號4
DOIs
出版狀態已發佈 - 2003 一月 27
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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