Step-taper active-region quantum cascade lasers for carrier-leakage suppression and high internal differential efficiency

J. D. Kirch, C. C. Chang, C. Boyle, L. J. Mawst, D. Lindberg, T. Earles, D. Botez

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

By stepwise tapering both the barrier heights and quantum-well depths in the active regions of 8.7 μm- and 8.4 μm-emitting quantum cascade lasers (QCLs) virtually complete carrier-leakage suppression is achieved, as evidenced by high values for both the threshold-current characteristic temperature coefficient T0 (283 K and 242 K) and the slope-efficiency characteristic temperature coefficient T1 (561 K and 279 K), over the 20-60 °C heatsink-temperature range, for low- and high-doped devices, respectively. Such high values are obtained while the threshold-current density is kept relatively low for 35-period, low- and high-doped devices: 1.58 kA/cm2 and 1.88 kA/cm2, respectively. In addition, due to resonant extraction from the lower laser level, high differential-transition-efficiency values (89-90%) are obtained. In turn, the slope-efficiency for 3 mm-long, 35-period high-reflectivity (HR)-coated devices are: 1.15-1.23 W/A; that is, 30- 40 % higher than for same-geometry and similar-doping conventional 8-9 μm-emitting QCLs. As a result of both efficient carrier-leakage suppression as well as fast and efficient carrier extraction, the values for the internal differential efficiency are found to be ∼ 86%, by comparison to typical values in the 58-67 % range for conventional QCLs emitting in the 7-11 μm wavelength range.

原文英語
主出版物標題Novel In-Plane Semiconductor Lasers XV
編輯Alexey A. Belyanin, Peter M. Smowton
發行者SPIE
ISBN(電子)9781510600027
DOIs
出版狀態已發佈 - 2016
對外發佈
事件Novel In-Plane Semiconductor Lasers XV - San Francisco, 美国
持續時間: 2016 2月 152016 2月 18

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9767
ISSN(列印)0277-786X
ISSN(電子)1996-756X

會議

會議Novel In-Plane Semiconductor Lasers XV
國家/地區美国
城市San Francisco
期間2016/02/152016/02/18

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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