Steep switching of In0.18 Al0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications

Pin Guang Chen, Kuan Ting Chen, Ming Tang, Zheng Ying Wang, Yu Chen Chou, Min Hung Lee

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Steep switching of In<sub>0.18</sub> Al<sub>0.82</sub> N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy

Medicine & Life Sciences